? 2007 ixys corporation, all rights reserved features high peak current capability low saturation voltage mos gate turn-on -drive simplicity rugged npt structure molding epoxies meet ul 94 v-0 flammability classification applications capacitor discharge pulser circuits advantages high power density suitable for surface mounting easy to mount with 1 screw, (isolated mounting screw hole) v ces = 2500 v i c25 =60a v ce(sat) 2.9 v ixgh25n250 ixgt25n250 IXGV25N250S g = gate, c = collector, e = emitter, tab = collector ds99760 (04/07) symbol test conditions maximum ratings v ces t j = 25c to 150c 2500 v v cgr t j = 25c to 150c; r ge = 1 m 2500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 25 a i cm t c = 25c, v ge = 20 v, 1 ms 200 a ssoa v ge = 20 v, t j = 125c, r g = 20 i cm = 240 a (rbsoa) clamped inductive load @ 1250v p c t c = 25c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-247) 1.13/10 nm/lb-in weight to-247 6 g to-268 4 g high voltage igbt for capacitor discharge applications symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 2500 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 50 a v ge = 0 v t j = 125c 1 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 25 a, v ge = 15 v 2.9 v i c = 75 a 5.2 v c (tab) g c e to-247 (ixgh) plus220smd (ixgv...s) g e c (tab) preliminary technical information to-268 (ixgt) g e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgh25n250 ixgt25n250 IXGV25N250S symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 50 a; v ce = 10 v, note 1 16 26 s i c(on) v ge = 15v, v ce = 20v, note 1 240 a c ies v ce = 25 v, v ge = 0 v, f = 1 mhz 2310 pf c oes 75 pf c res 23 pf q g i c = 50 a, v ge = 15 v, v ce = 0.5 v ces 75 nc q ge 15 nc q gc 30 nc t d(on) 68 ns t ri 233 ns t d(off) 209 ns t fi 200 ns r thjc 0.5 c/w r thcs (to-247) 0.25 c/w resistive load i c = 50 a, v ge = 15 v, note 1 v ce = 1250 v, r g = 5 notes: 1. pulse test, t 300 s, duty cycle, d 2 % 2. additional provisions for lead-to-lead voltage isolation are required at v ce > 1200 v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. plus220smd (ixgv_s) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) tab - drain (collector) to-268 (ixgt) outline (d3-pak) ref: ixys co 0052 ra ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2007 ixys corporation, all rights reserved ixgh25n250 ixgt25n250 IXGV25N250S fig. 1. output characteristics @ 25oc 0 15 30 45 60 75 90 105 120 135 150 012345678 v ce - volts i c - amperes v ge = 25v 20v 10v 15v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 0 2 4 6 8 101214161820 v ce - volts i c - amperes v ge = 25v 20v 15v 10v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 200 0246810121416 v ce - volts i c - amperes v ge = 25v 20v 10v 15v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 150a i c = 100a i c = 50a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 3 4 5 6 7 8 9 10 7 8 9 1011121314151617 v ge - volts v ce - volts i c = 150a v ge = 15v i c = 100a i c = 50a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 45678910111213 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgh25n250 ixgt25n250 IXGV25N250S fig. 7. transconductance 0 3 6 9 12 15 18 21 24 27 30 33 36 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. resistive turn-on rise time vs. junction temperature 200 240 280 320 360 400 440 480 520 560 600 640 680 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 v ge = 15v v ce = 1250v i c = 150a i c = 50a fig. 9. resistive turn-on rise time vs. collector current 200 250 300 350 400 450 500 550 600 650 700 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t r - nanoseconds r g = 5 v ge = 15v v ce = 1250v t j = 125oc t j = 25oc fig. 12. resistive turn-off switching times vs. collector current 190 195 200 205 210 215 220 225 230 235 240 245 50 60 70 80 90 100 110 120 130 140 150 i c - amperes t f - nanoseconds 110 120 130 140 150 160 170 180 190 200 210 220 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 1250v t j = 125oc t j = 25oc fig. 10. resistive turn-on switching times vs. gate resistance 480 500 520 540 560 580 600 620 640 660 680 700 4 6 8 101214161820 r g - ohms t r - nanoseconds 80 84 88 92 96 100 104 108 112 116 120 124 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 150a i c = 50a fig. 11. resistive turn-off switching times vs. junction temperature 190 195 200 205 210 215 220 225 230 235 240 245 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 110 120 130 140 150 160 170 180 190 200 210 220 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 1250v i c = 50a, 150a i c = 150a, 50a
? 2007 ixys corporation, all rights reserved ixys ref: g_25n250 (5p-p528) 04-27-07-d.xls ixgh25n250 ixgt25n250 IXGV25N250S fig. 14. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 1250v i c = 50a i g = 10 ma fig. 15. reverse-bias safe operating area 0 40 80 120 160 200 240 280 250 500 750 1000 1250 1500 1750 2000 2250 2500 v ce - volts i c - amperes t j = 125oc r g = 20 dv / dt < 10v / ns fig. 16. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 17. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z ( t h ) jc - oc / w fig. 13. resistive turn-off switching times vs. gate resistance 200 205 210 215 220 225 230 235 240 245 250 255 260 4 6 8 101214161820 r g - ohms t f - nanoseconds 100 115 130 145 160 175 190 205 220 235 250 265 280 t d ( o f f ) - nanosecond s t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 150a, 50a
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